宁波市对外经济贸易合作局

 

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PROPOSED PROJECTS FOR INTERNATIONAL ECONOMIC & TECHNICAL COOPERATION IN NINGBO IN 2005

Industry: electronic

March 10, 2005      

Project name

Expanded Production of Polysilicon Chips for Solar Cell

Cooperation form

Equity JV or contractual JV

Project description

Production scheme
Construction plan
Market analysis
Operation scale
Sales forecast

   Project scale: annual output of 18 MW polysilicon chips for solar cell.
   The project aims to increase the existing polysilicon chip production capacity of 2 MW s to a future capacity of 20 MW. The product specification will be toward the thinner and larger, namely, from present size of 125x125 to future size of 150x150, and from present thickness of 0.33mm thickness to future thickness of 0.25mm. The project intends to introduce fund, advanced equipment and technology. New buildings and support facilities will be built over the existing factory premises. The construction period of the project is one year as planned.
   The products of the company fall short of the current market demand both at home and abroad. Memoranda of understanding on sales of products from the expanded factory have already signed with main international buyers.
   Annual sales income is forecasted at RMB 200 million and annual profit at RMB 50 million.   

Equipment import & material supply

   Main equipment to be imported at a cost of around USD 11.5 million. Main parts and materials to be imported and supplemented by domestic purchases. Currently, material and parts are available from market, but their prices are rising rapidly.

Investment estimate & cost efficiency

Total investment

USD15 million

Registered capital

USD10 million

Annual sales

RMB200 million

Anticipated means of investment from foreign partner

Annual profit

RMB50 million

Foreign exchange

Technology

Equipment

Brand name

Others

Internal return rate

25%

a

a

a

 

a

Payback period

5 yrs

Basic facts of Chinese partner (ownership, total and fixed assets, current products and sales, current equipment and technology, support facility, etc.)

   Zhejiang Jinggong Photoelectric Co., Ltd. is first private enterprise in China the possesses the production lines of MW rated polysilicon chips for solar cell. The company has the world latest equipment and technologies and is one of the only two producers of polysilicon chips in China. Its predecessor is Zhejiang Zhongyi Solar Energy Co., Ltd. Now the company is a joint effort between the Jinggong Group (a listed company, having controlling shares) and China Photoelectric Technology Development Center, with total assets of RMB 35 million and registered capital of RMB 20 million. Now, the company has developed a steady production capacity of 2MW polysilicon chips. As a next move, it will develop the downstream products, namely the polysilicon solar cell and components. Presently, it mainly produces the 125*125 and 103*103 sized polysilicon chips for solar cell, and the products are supplied to major firms in the industries. The company maintains a long-term technical cooperation with Eni Technologie of Italy and the Silicon Material Lab of Zhejiang University.

Project location & geographic advantage

   The project is located in Ningbo Free Trade Zone and is entitled to preferential policies of the Zone. The enterprise has a good production and sales foundation.

Project status quo

   Land for facility expansion and supporting utility already secured.

Project data available

   Project data

Organization to contact

Zhejiang Jinggong Photoelectric Co., Ltd.

Person to contact

Chen Xiangqun

Address

26 Donggang Avenue, Ningbo Free Trade Zone

Postcode

315800

Telephone

0086-574-86820801

Fax

0086-574-86880129

E-mail

cxq@sipv2000.com  

Website

www.sipv2000.com  


Ningbo Foreign Investment Development Board
Add:18/F, 190 lingqiao Road, Ningbo, China
Code:315000
Tel:86-574-87315792(NO.1 DEPT),87313267(NO.2 DEPT),87322285(NO.3 DEPT)
Fax:86-574-87315992,87315873
E-mail:service@ningbochina.com, invest@ningbochina.com
Website:Http://www.ningbochina.com

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